Memory Compilers

Mobile Semiconductor is the industry’s leading innovator in the design and delivery of highly-differentiated embedded SRAM memory solutions. Silicon-proven, optimized memory compilers and instances set the standard in high performance and low voltage embedded SRAMs for the silicon IP marketplace.

The Trailblaze™ software has been proven over multiple foundries with a range of technology nodes in its ability to rapidly generate memory compilers and complete memory instances across a broad application space.

Using proprietary and patented design techniques, Mobile Semiconductor applies the industry’s highest level of expertise to deliver reduced power and increased performance in area-efficient die sizes for the industry’s most optimized embedded SRAM solutions.

Mobile Semiconductor’s innovative technologies include:

● Low Voltage (LV) Embedded SRAM

● Ultra High Speed (UHS) Embedded SRAM

● Multi-Megabit (MM) Embedded SRAM

● Radiation Hardened (RH) Embedded SRAM

● Custom Embedded SRAM Solutions

● Trailblaze™ Built-in Self Test (BIST) Compiler

● Trailblaze™ Software for Optimized, Embedded SRAM Solutions

 

Low Voltage (LV) Embedded SRAM

Mobile Semiconductor delivers optimized, embedded SRAM solutions that are designed for the lowest operating voltages and lowest standby currents available in the marketplace. Fully functional embedded SRAMs and ROMs that operate at minimal power and have ultra-low power standby capabilities extend useful battery lives of end products. Our technology enables our customers to benefit from a significant reduction in standby current using standard foundry provided SRAM bit cells in 65nm, 55nm, 40nm, and 28nm technologies. Mobile Semiconductor has been developing and silicon testing low voltage memories since 2011. These silicon proven memories are ideal for the Internet of Things (IoT) market.

Offering 28nm, 40nm, and 55nm Silicon Proven solutions operating below 0.8V with 50MHz+ performance and 1.1V with 1.5GHz performance, Mobile Semiconductor’s proprietary, silicon-proven design and layout techniques maximize performance and keep die sizes small. Innovative design techniques enable a wider range of dynamic voltage scaling (DVS) and dynamic voltage and frequency scaling (DVFS) for minimal power consumption.

Mobile Semiconductor’s optimized solutions are designed with the industry’s leading experience in bit cell stability and statistical analysis for yield and leakage. High threshold voltage (V_T) devices are used to minimize leakage currents with limited standard V_T devices used when required.

Robust, low voltage latches are used throughout designs to ensure soft error immunity. Mobile Semiconductor’s optimized, embedded SRAM solutions don’t require multiple voltages or custom bit cells. With silicon-proven solutions, Mobile Semiconductor is the industry’s leader in optimized, low voltage embedded SRAM design.

 

Ultra High Speed (UHS) Embedded SRAM

Mobile Semiconductor delivers optimized, embedded SRAM solutions that are designed for the highest operating speeds available in the marketplace while keeping die sizes small. Proprietary silicon-proven design and layout techniques are applied to achieve high performance architectures in low power processes.

The production-proven Trailblaze™ software generates a range of embedded SRAM sizes with performance of up to 2GHz. Low V_T and standard V_T devices are used to optimize the critical path, enhancing performance while limiting static current.

Mobile Semiconductor’s optimized solutions are designed with the industry’s leading experience in robust sense amp design as well as designs that achieve the best statistical timing analysis for yield. Additionally, robust, low voltage latches are used throughout designs to ensure soft error immunity.

When the SRAM is in the critical path or the design’s high clock rate requires a best-in-class embedded SRAM, the Trailblaze™ software leverages high speed foundry bit cells to produce instances optimized for faster access times and minimum setup times. Mobile Semiconductor’s silicon-proven solutions provide the industry’s best optimized, high speed embedded SRAM designs.

 

Multi-Megabit (MM) SRAM Macros

Mobile Semiconductor’s multi-megabit macro compiler generates memory macros using our high density SRAM instances. Our proprietary silicon-proven design and layout techniques achieve the highest SRAM block densities for your designs. Mobile Semiconductor’s multi-megabit macro compilers generate L-shaped or rectangular shaped footprints for flexibility in SOC floorplanning.

To maximize the yield, the SRAM macro compiler provides redundancy in each memory sub-array. Mobile Semiconductor’s multi-megabit macro compilers eliminate the need for iterative synthesis, place-and-route experimentation and aspect ratio analysis, resulting in quick, high-density multi-megabit SRAM macro-block instantiations.

 

Radiation Hardened (Rad Hard) Embedded SRAM

Mobile Semiconductor is the only independent memory compiler company specializing in radiation hardened embedded SRAM technology. Mobile Semiconductor’s optimized solutions are developed with the industry’s leading experience in designing to radiation hardening targets: Total Ionizing Dose (TID), Multi-Bit Upset (MBU), minimum critical charge (Qcrit) and Single Event Effects (SEE) including Single Event Latchup (SEL), Single Event Upset (SEU) and Single Event Transients (SET).

The Trailblaze™ software generates complete memory instances that meet leading aerospace and defense corporations’ stringent radiation hardening criteria. Optimized, embedded SRAMs by Mobile Semiconductor also have the option to include the Trailblaze™ Built-in Self Test (BIST) Compiler for seamless integration of verification.

As a privately-held U.S. company, Mobile Semiconductor is registered for ITAR (International Traffic in Arms Regulations) as an SRAM and design service provider. Mobile Semiconductor’s rad hard solutions come with broad and flexible IP rights and the full design databases for all instances. All rad hard development data is maintained in a separate secure network and location for which access is restricted to the specific project development team members only..

Radiation hardened by design (RHBD), Mobile Semiconductor’s innovative design approach incorporates Triple Mode Redundancy (TMR), DICE latches and Qcrit optimization to reduce SET and SEU, as well as bit separation to reduce MBU. Mobile Semiconductor’s RHBD techniques may be applied to both standard and radiation hardened CMOS processes, which includes enhancing designs using radiation hardening by process (RHBP).

Robust DICE latches and Triple Mode Redundancy (TMR) are used throughout Mobile Semiconductor’s rad hard designs to ensure soft error immunity. To further enhance yield, the Trailblaze™ software can instantiate optional redundancy columns in each memory sub-array of the single-port architectures.

 

Custom Solutions

Mobile Semiconductor works closely with customers to deliver complete solutions that enable rapid product delivery to market. Mobile Semiconductor’s proven expertise includes low voltage and ultra high speed embedded SRAMs, radiation hardened SRAMs, and error correction (ECC) architectures. The innovative Trailblaze™ software has been proven across multiple foundries and technology nodes, producing industry-leading reduced die sizes.

Our highly experienced management and technical teams develop optimized embedded SRAM compilers and instances along with extensive design flow support. Mobile Semiconductor has a proven track record in delivering best-in-class embedded memory solutions for a broad range of applications, market segments and industries.

Mobile Semiconductor’s custom solutions include:

● optimized, embedded SRAM solutions in the following architectures:

● low voltage (LV)

● ultra high speed (UHS)

● high density (HD)

● radiation hardened optimized, embedded SRAM compilers

● single-port solutions

● dual-port solutions

● read-only memory (ROM) solutions

● register file solutions

Mobile Semiconductor’s highest level of industry expertise has been implemented using SMIC, IBM and GLOBALFOUNDRIES technologies. Trailblaze™ software solutions have been produced across low power and standard 45/40nm, 65/55nm, 90nm and 150nm technology nodes. Proprietary design techniques are applied to meet stringent radiation hardened criteria to meet leading aerospace and defense corporations’ radiation hardening standards.

Let Mobile Semiconductor develop the optimized memory IP you need to quickly bring your next product to market.

 

Trailblaze™ Built-in Self Test (BIST) Compiler

Mobile Semiconductor’s Trailblaze™ Built-in Self Test (BIST) Compiler provides seamless integration to verify Mobile Semiconductor’s optimized memory solutions. The configurable Trailblaze™ BIST performs at-speed testing of embedded SRAMs generated by Mobile Semiconductor’s compilers.

Programmable March algorithms included in the Trailblaze™ BIST give extensive test coverage, and diagnostic capabilities provide multiple options to isolate defects.

The Trailblaze™ BIST Compiler generates a synthesizable Verilog RTL IP module as well as a top-level Verilog module to instantiate both the Trailblaze™ BIST and the Mobile Semiconductor embedded SRAM instance. Synthesis scripts are provided for enhanced design flow support.

 

Trailblaze™ Software for Optimized, Embedded SRAM Solutions

Mobile Semiconductor’s Trailblaze™ software has been proven over multiple foundries with a range of technology nodes in its ability to rapidly generate memory compilers and complete memory instances across a broad application space.

Memory Compilers